On the measurement of the Pockels effect in strained silicon
- Submitting institution
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Bangor University / Prifysgol Bangor
- Unit of assessment
- 12 - Engineering
- Output identifier
- UoA12_29
- Type
- D - Journal article
- DOI
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10.1364/OL.40.001877
- Title of journal
- Optics Letters
- Article number
- -
- First page
- 1877
- Volume
- 40
- Issue
- 8
- ISSN
- 0146-9592
- Open access status
- Out of scope for open access requirements
- Month of publication
- April
- Year of publication
- 2015
- URL
-
-
- Supplementary information
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- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
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4
- Research group(s)
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-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- International collaboration resulting in resolution of anomalous phenomenon in strained silicon modulators, showing surface charge trapped in the device can masquerade as a false Pockels effect. This important result informed the subsequent work of several major international academic and industrial groups (e.g., UC San Diego, Georgia Tech and IBM) and was referenced in a 2017 Nature Photonics paper by MIT researchers. Also resulted in invited paper in IEEE Proceedings (J. Witzens DOI: 10.1109/JPROC.2018.2877636) and contributed to a successful German BMBF funded grant ( EFFICIENTlight, 3M euros) and best PhD thesis award (RWTH 2109) for first author Saeed Sharif.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
