Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators
- Submitting institution
-
Royal Holloway and Bedford New College
- Unit of assessment
- 12 - Engineering
- Output identifier
- 31332511
- Type
- D - Journal article
- DOI
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10.1021/acsnano.5b03980
- Title of journal
- ACS Nano
- Article number
- -
- First page
- 10237
- Volume
- 9
- Issue
- 10
- ISSN
- 1936-0851
- Open access status
- Out of scope for open access requirements
- Month of publication
- September
- Year of publication
- 2015
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
10
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- This work reports a comprehensive study of the atomic-scale spin and orbital moments of a prototype magnetic topological insulators (Bi2-xCrxSe3) that give rise to quantum anomalous Hall effect – a critical phenomenon that underpins the next generation dissipationless electronics and topological quantum computing. Several exceptional state-of-the-art techniques were employed to ambiguously address the question. ‘The results provide an explanation for the disparate results and a path forward to obtain reproducible data between labs around the world’ (ACS editor’s comment) of this strategically important material system.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
