High Interfacial Hole‐Transfer Efficiency at GaFeO3 Thin Film Photoanodes
- Submitting institution
-
University of Northumbria at Newcastle
- Unit of assessment
- 12 - Engineering
- Output identifier
- 32647258
- Type
- D - Journal article
- DOI
-
10.1002/aenm.202002784
- Title of journal
- Advanced Energy Materials
- Article number
- 2002784
- First page
- -
- Volume
- 10
- Issue
- 45
- ISSN
- 1614-6832
- Open access status
- Compliant
- Month of publication
- October
- Year of publication
- 2020
- URL
-
-
- Supplementary information
-
-
- Request cross-referral to
- -
- Output has been delayed by COVID-19
- No
- COVID-19 affected output statement
- -
- Forensic science
- No
- Criminology
- No
- Interdisciplinary
- No
- Number of additional authors
-
2
- Research group(s)
-
-
- Proposed double-weighted
- No
- Reserve for an output with double weighting
- No
- Additional information
- This invited paper appearing in the ‘Hot Topic: Surfaces and Interfaces’ collection, reports the use of GaFeO3 in photoelectrochemical water-splitting for the first time. We demonstrate that GaFeO3 offers exceptionally deep flat-band potential suitable to generate a large photovoltage and an interfacial hole-transfer efficiency exceeding 50%, far greater than any other ferrite photoelectrode. The origins of unique photoelectrochemical responses have been rationalised with detailed bonding and electronic structure analysis.
- Author contribution statement
- -
- Non-English
- No
- English abstract
- -
